Kioxia has begun sending sample 1 Tb triple‑level‑cell SSD chips built on its 10th‑generation BiCS FLASH platform. The devices will debut in the company’s enterprise and data‑center drives, aiming to satisfy AI workloads that need more capacity, speed and lower power draw. Production runs out of the Kitakami Plant Fab2 in Iwate, Japan.

The new NAND uses CMOS directly bonded to array (CBA) and on‑pitch select gate drain (OPS) technologies first seen in the 8th generation. Stacking 332 layers lifts bit density by 59%, while the interface now reaches 4.8 Gb/s, a 33% jump over its predecessor. Write power drops 18% and read power 30%, trimming data‑center electricity use.

Kioxia’s dual‑axis roadmap pushes the 9th‑gen line for cost‑effective performance while the 10th‑gen targets massive capacity and top‑tier speed. By delivering higher‑density, more efficient memory, the company solidifies its role in powering modern AI infrastructure.