Kioxia Corporation and Sandisk Corporation have unveiled their new 9th-generation, high-performance 2 Tb QLC 3D flash memory technology, designed to support AI-driven infrastructure. The technology leverages CMOS directly Bonded to Array (CBA) architecture, combining an advanced CMOS wafer with a proven memory-array platform to deliver improved performance and faster deployment of storage solutions for cloud and data-intensive applications.\n\nCompared with the previous 8th-generation 2 Tb QLC, the new technology offers higher write and read bandwidth thanks to a 6-plane architecture and performance enhancements, along with better power efficiency. It also delivers a NAND interface speed of 4.8 Gb/s, a 33% improvement over 8th-generation devices.\n\nKioxia CTO Hideshi Miyajima stated, "By leveraging its proven memory cell technology together with the latest CMOS technology, Kioxia is accelerating development of its 9th-generation flash memory." Sandisk CTO Alper Ilkbahar added, "Our 9th-generation QLC technology demonstrates the unique flexibility of CBA to accelerate innovation...

We are bringing new capabilities to market more quickly with exceptional capital efficiency."\n\nThe introduction marks a milestone in the 3D flash memory roadmap, highlighting the continued collaboration between Kioxia and Sandisk. By maximizing CBA platform flexibility, the companies aim to create new NAND innovation opportunities and help customers address the storage demands of the AI era.