Kioxia Corporation and Sandisk Corporation announced a new 10th‑generation Tin‑Level‑Cell (QLC) 3D flash memory that delivers a 60% increase in bit density, exceeding 37 Gb/mm² in a 332‑layer architecture, setting a new industry benchmark for density, performance and power efficiency.

The breakthrough is enabled by CMOS directly Bonded to Array (CBA) technology, which fabricates logic and memory on separate wafers before wafer‑to‑wafer bonding. This approach improves read/write bandwidth and yields the industry’s first QLC 3D flash with a 4.8 Gb/s interface, powered by Toggle DDR6.0 and a Separate Command Address (SCA) protocol.

Power‑isolated low‑tapped termination (PI‑LTT) enhances I/O data‑out transfer efficiency, directly addressing the power and cooling challenges of AI and hyperscale data‑center workloads. Chief Technology Officers Hideshi Miyajima and Alper Ilkbahar highlighted the technology’s potential to scale AI, generative, and agent‑based applications.

Key highlights include the 332‑layer design, CBA manufacturing efficiency, and the high‑speed 4.8 Gb/s interface, positioning this NAND as a scalable foundation for next‑generation infrastructure перес.