Kioxia Corporation, a world leader in memory solutions, has begun sample shipments of its 1 Tb 9th-generation Bi CS FLASH 3D flash memory devices. These Triple‑Level Cell (TLC) modules are tailored for AI‑enabled PCs and smartphones that need high performance at low‑to‑mid storage capacities.

Under a dual‑axis strategy, Kioxia advances two product lines simultaneously. The 9th‑generation line delivers high performance at a lower cost, while the 10th‑generation line uses advanced layer stacking to provide massive capacity and superior performance.

The new devices employ a 230‑layer stacking process based on 8th‑generation technology and advanced CMOS, achieving a NAND interface speed of 4.8 Gb/s—a 33% improvement over the previous generation—and matching the performance of the 10th‑generation offerings.

Guided by its mission to "uplift the world with memory," Kioxia remains committed to technological innovation, strengthening global partnerships, and delivering the advanced storage solutions that power modern AI infrastructure.