KIOXIA has unveiled its new UFS 4.1 embedded memory devices utilizing QLC (quadruple-level cell) technology. These devices are designed for read-intensive applications, particularly in mobile devices where high-capacity storage is crucial. The new memory leverages KIOXIA's 8th generation BiCS FLASH 3D flash memory, promising improved performance and storage density.

QLC technology allows for higher bit density compared to TLC, making it suitable for larger storage capacities in smartphones and tablets. The new KIOXIA devices boast a 25% increase in sequential write speeds, along with 90% and 95% gains in random read and write speeds, respectively. These improvements are due to advancements in controller technology and error correction.

These new UFS 4.1 devices are available in 512GB and 1TB capacities to meet growing storage demands. KIOXIA's advancements also target emerging product categories, including PCs, AR/VR, and AI-enabled devices. The company is responding to the increasing need for more storage in various applications.

KIOXIA's move reflects the ongoing trend of increasing storage capacity and performance in mobile devices and beyond. With the growth of AI and immersive technologies, the demand for faster and more capacious storage solutions will only continue to rise. This announcement signals KIOXIA’s commitment to staying ahead in the flash memory market.