Kioxia Corporation, a world leader in memory solutions, announced its new UFS 5.0 embedded flash memory devices designed to meet the performance, efficiency and capacity demands of next‑generation AI‑enabled mobile and edge devices. The products will be showcased next week at FMS: the Future of Memory and Storage and are currently available as commercial samples in 1 TB and 512 GB capacities, with mass production slated for the end of 2026.

Built on the JEDEC UFS 5.0 standard, the devices use the MIPI M‑PHY v6.0 physical layer and Uni Pro v3.0 protocol, including HS‑Gear6 operation, to support theoretical interface speeds of up to 46.6 Gb/s per lane and roughly 10.8 GB/s of effective dual‑lane read/write performance. This speed boost addresses the growing bottleneck of UFS read throughput for on‑device AI workloads such as large language models, multimodal AI, advanced imaging and real‑time inference.

Kioxia’s solution combines an in‑house UFS 5.0 controller with its Bi CS FLASH generation 8 3D flash memory, delivering higher sequential read/write rates, improved power efficiency, better thermal management and a compact 7.5 × 13 mm BGA package. The technology is tailored for premium smartphones, AI‑enabled tablets, gaming systems, AR/VR devices, robotics, smart security cameras and industrial edge applications that demand fast local storage for data‑intensive AI tasks.

The company continues to push its UFS portfolio, aiming to satisfy the increasing need for higher capacity, greater performance and lower power consumption in AI‑driven mobile and edge environments.