SanDisk Corporation announced it is now sampling its BiCS10 1 Tb TLC flash memory, the company's 10th-generation 3D NAND technology. This new memory achieves industry-leading density exceeding 29 Gb/mm² while delivering up to 4.8 Gb/s interface speeds - a 33 percent improvement over the previous generation currently in mass production.

Built on SanDisk's Bit-Cost Scalable architecture and CMOS directly Bonded to Array technology, the BiCS10 increases memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol, and PI-LTT technology. These advances push bit density up by 59 percent compared to earlier generations, addressing growing demands for higher-capacity storage solutions.

The technology also improves power efficiency significantly, reducing input power consumption by 10 percent and output power by 34 percent versus BiCS8. This matters because modern computing workloads, especially AI-driven applications, require both performance and efficiency at scale. The sampling milestone demonstrates SanDisk's continued innovation in flash storage architecture.

As Alper Ilkbahar, CTO at SanDisk, explained, NAND flash serves as mission-critical infrastructure for today's connected, data-intensive world. The BiCS10 represents SanDisk's long-term roadmap for scaling NAND through continued density, power efficiency, and architectural improvements.