ASML announced that Samsung and TSMC will adopt its High NA extreme ultraviolet (EUV) lithography machines, joining Intel in advancing chip manufacturing technology. Samsung plans to deploy the NA EUV technology by 2028 for DRAM memory products, while TSMC will integrate it into advanced nodes starting in 2030. Currently, only Intel has deployed High NA EUV on its 18A process for select Core Ultra Series 3 processors.

ASML also revealed a new initiative with TSMC and Samsung to transition from the current six-inch photomasks to larger 12-inch photomasks. These larger masks aim to increase fab productivity, lower chipmaking costs, and eliminate stitching constraints in advanced node production. ASML plans to test 12-inch photomask fabs in 2031, with production expected to begin in 2033.

Marco Pieters, ASML's chief technology officer, stated that if the industry successfully implements the technology, system productivity could increase by 40 percent. The collaboration marks a significant step toward addressing global chip shortages through advanced manufacturing capabilities.