Intel and SoftBank subsidiary Saimemory are joining forces to develop Z-Angle Memory (ZAM), a new stacked DRAM architecture designed for AI and high-performance computing. This collaboration aims to surpass current high-bandwidth memory (HBM) solutions. The technology leverages Intel's Next Generation DRAM Bonding (NGDB) work, a project stemming from the U.S. government's Advanced Memory Technology program.

ZAM promises higher memory capacity and bandwidth while consuming less power. Saimemory is targeting two to three times the capacity of today's HBM, with a 40-50% reduction in power consumption. Prototypes are expected by early 2028, with commercial products launching in 2029. SoftBank is investing approximately ¥3 billion in the prototype phase.

For Intel, this partnership represents a return to advanced memory technologies after exiting the DRAM market years ago. The development of advanced memory solutions is crucial for meeting the growing demands of AI and data-intensive applications. Increased memory capacity and bandwidth are essential for accelerating AI workloads.

The industry is seeing increasing demand for memory as AI applications become more complex. Competitors like Samsung and SK Hynix are also investing heavily in advanced memory technologies like HBM. The success of ZAM and its ability to compete with existing solutions will be a key factor to watch in the coming years.