Chinese memory giant CXMT has reportedly begun risk production of HBM3E memory, according to The Information. This marks a significant milestone as Chinese manufacturers are currently two generations behind South Korean companies transitioning to HBM4E. While HBM3E manufacturing has started in very low quantities, it signals the commencement of risk production.

The standard JEDEC specification requires a 1,024-bit width with speeds ranging from 9.2 Gbps to 12.4 Gbps per pin, targeting approximately 1.2 TB/s total bandwidth. Capacities range from 24 GB using 8-high stacks to 36 GB using 12-high stacks. CXMT is on track to achieve 350,000 DRAM wafers per month by year's end, with plans to scale further.

The company operates two 12-inch fabs in Hefei and Beijing, each producing roughly 100,000 wafers monthly, resulting in a current combined output of approximately 200,000 wafers per month. CXMT aims to triple this capacity to 600,000 wafers per month upon completion of its Shanghai and Hefei plants. The rapid progression from risk to mass production suggests high volume manufacturing could arrive within weeks.