SK hynix announced new fabs in Yongin and Cheongju to meet AI memory demand. Total investment 54 trillion won, 35.2 trillion in Yongin Y2, 19.1 trillion in Cheongju M17.

This follows a mid‑to‑long‑term strategy from last June. Building on the first fab Y1, SK hynix will construct Y2 with a floor area of 341,000 pyeong (~1,130,000 m²) and open its first cleanroom in June 2029 for HBM and next‑gen DRAM. M17 will cover 206,000 pyeong (~680,000 m²) and start its cleanroom in December 2028.

Market research by Omdia projects DRAM and NAND demand growing at a 19% CAGR through 2030, driven by enterprise SSDs and AI inference. SK hynix views this as structural, not a temporary supercycle, and emphasizes the need to supply volume right when customers need it.

Construction timelines are accelerated: Yongin cluster aims to finish all four fabs by 2033, versus 2045 originally. The investment will boost local employment, supply‑chain partners, and reinforce South Korea’s semiconductor ecosystem, supporting global AI supply‑chain stability.