SK hynix is rapidly transitioning its DRAM production capacity to the advanced 1c node, sixth-generation 10 nm-class technology. In Q1 2026, the 1c node accounted for 10% of production, rising to 13% in Q2, and is expected to reach 24% in Q3 and 34% in Q4. By Q1 2027, 1c is projected to represent 35% of output, overtaking the fifth-generation 1b node at 33%.

Unlike logic nodes, DRAM scaling relies on refinements of 10 nm technology using additional EUV layers. The dominant 1b node operates at 12-13 nm with four EUV layers, while 1c shrinks to 11-12 nm with five to six layers. SK hynix plans to use 1c for HBM4E, LPDDR6, and DDR5, while 1b supports DDR5, LPDDR5X, HBM3E, and HBM4.

In comparison, Samsung currently runs 1c on just 16% of output, and Micron at 19%. SK hynix is set to surpass both competitors by Q4. Looking forward, the company is exploring 4F² vertical gate transistors and 3D DRAM stacking to overcome the physical limits of traditional 6F² planar layouts, though 1c will remain a key node for years.