Samsung Electronics and ASML announced an expanded strategic partnership to advance High NA EUV lithography and next-generation semiconductor manufacturing for the AI era. The collaboration includes Samsung joining an industry initiative to transition from 6-inch to 12-inch photomask technology, which is expected to increase fab productivity, lower chipmaking costs, and remove stitching constraints for High NA EUV. Leveraging its leadership in memory and foundry manufacturing, Samsung will help develop the required mask technologies and infrastructure.

Samsung also plans to introduce ASML's High NA EUV lithography into future DRAM high-volume manufacturing by 2028, a first for the industry. This move aims to extend the DRAM scaling roadmap through improved resolution, process simplification, and increased efficiency. The companies emphasized a shared commitment to innovation and long-term partnership across advanced memory and logic applications.

Young Hyun Jun of Samsung stated the AI era increases the importance of technological innovation across the value chain, and strengthening collaboration with ASML lays the foundation for next-generation innovation. Christophe Fouquet of ASML called Samsung one of its most important innovation partners and highlighted the critical role of close customer collaboration in the new AI-driven era.