Samsung Foundry has delayed adoption of High‑NA EUV lithography until 2030, the year it plans to launch its 1 nm node. Although the new generation of EUV tools is available, the company has not yet committed to the expensive ASML machines, citing strong performance with existing Low‑NA equipment. The move positions Samsung as one of the last major foundries to switch to High‑NA technology.

Intel is already scaling its 14 nm node with High‑NA tools, and TSMC is expected to introduce them in 2029. By contrast, Samsung has chosen a conservative approach, leveraging Low‑NA EUV’s lower cost and proven reliability. The decision is partly driven by the price tag— the top‑tier High‑NA system from ASML costs around $400 million—which is a significant investment for a modern fab.

Low‑NA tools are roughly half the price of their High‑NA counterparts and can achieve similar patterning quality through multi‑patterning, where the wafer is etched in multiple passes. While this technique mitigates the need for new equipment, it has limitations that High‑NA systems will overcome when nodes reach 1 nm and below.

Samsung’s timeline aligns with its broader roadmap, ensuring that the introduction of High‑NA tools occurs when the technology demand justifies the cost. Until then, the foundry will continue to refine Low‑NA processes, maintaining a competitive edge in the industry.