At Hot Chips 2026, Samsung's [PERSON_NAME] confirmed HBM4E memory is reaching 16 Gbps per pin, up from the 14 Gbps shipped since late May. This advancement boosts single-stack bandwidth to 4 TB/s, compared to 3.6 TB/s at 14 Gbps. With 2,048 pins per stack and roughly a dozen stacks per AI accelerator or GPU, total memory bandwidth becomes substantial.

Samsung currently offers 12-layer stacks with 48 [ADDRESS] density, but plans include 8-layer 32 [ADDRESS] and 16-layer 64 [ADDRESS] options. The technology uses a 6th-generation 10 nm class DRAM process and a custom 4 nm SF4 base die for improved integration across packages.