Samsung Electronics showcased its latest AI memory innovations at FMS 2026, unveiling its future roadmap and concept models. The company presented z HBM and z NAND-O, representing the next generation of 3D memory architectures designed for advanced AI computing. z HBM introduces a new design where HBM is stacked directly above AI accelerators, aiming for significantly higher bandwidth and improved power efficiency by minimizing data travel distance.

Samsung also unveiled the industry-first V10 BV-NAND with 400-plus layers, utilizing a new wafer bonding technology. This advancement builds on Samsung's pioneering V-NAND technology introduced in 2013, offering increased storage density, higher performance, and improved power efficiency.

The company's AI memory roadmap includes HBM4E, HBM5, and LPDDR5X-PIM, highlighting its commitment to advancing AI infrastructure. Samsung also demonstrated its integrated device manufacturer capabilities, offering one-stop turnkey solutions for next-generation AI semiconductor development and production, aiming to accelerate time-to-market for customers.