NEO Semiconductor, a leading innovator in advanced AI and memory technologies, today unveiled NEO.AI, a next‑generation AI memory platform aimed at overcoming the two biggest memory bottlenecks that limit future AI systems—on‑chip memory (AI cache) and HBM capacity.

As part of the launch, the company introduced X‑SRAM, a breakthrough on‑chip memory technology, and 3D X‑DRAM, a revolutionary high‑capacity HBM solution. X‑SRAM delivers up to 5× higher memory density than conventional SRAM while maintaining performance, and fade 3D X‑DRAM leverages 3D NAND processesโจ achieve up to 10× greater HBM capacity.

“Memory innovation is becoming critical for the future of artificial intelligence,” said Andy Hsu, Founder and CEO of NEO Semiconductor. “With NEO.AI, we are providing scalable memory foundations that break the AI Memory Wall.”

Stan Shih, Founder of Acer and former TSMC Board Director, added that AI is reshaping industries and that NEO Semiconductor’s innovations like X‑SRAM and NEO.AI will open new opportunities for the global semiconductor and AI ecosystems.