Micron kicked off 1α DRAM manufacturing at its Manassas, Virginia fab, marking the first time the most advanced US‑made memory node runs on American soil. The milestone underscores Micron's role as the sole domestic memory producer and targets long‑lifecycle DDR4 and LP4 chips for automotive, defense, aerospace, industrial, networking and medical markets.

The rollout follows a $2 billion expansion that modernizes the plant and supports over 3,100 direct jobs. Federal, state and local incentives helped fund the project, and senior officials including Secretary of Commerce Howard Lutnick and Senators Mark Warner and Tim Kaine attended the ceremony. Micron expects qualified 1α output by the end of 2026, quadrupling DDR4 wafer capacity at Manassas.

Micron pairs the Virginia line with its high‑bandwidth offerings from Boise, Idaho, and Clay, New York, creating a full spectrum of memory solutions for the AI era. The company also pledged more than $325 million for workforce development, apprenticeships and STEM programs across Virginia, Idaho and New York, aiming to sustain the talent pipeline needed for advanced semiconductor manufacturing.

Combined with new facilities in New York and two Idaho fabs, Micron’s U.S. build‑out projects roughly 90,000 jobs and aligns with the CHIPS and Science Act’s national security goals. The Manassas expansion now delivers a tangible, domestically sourced memory source for critical American industries.