Micron broke ground on a ¥1.5 trillion ($9.3 billion) factory expansion in Hiroshima Prefecture, Japan. Installation of new equipment is slated for the second half of 2028, confirming earlier reports of a dedicated high‑bandwidth memory (HBM) plant.

The Japanese government will contribute up to ¥500 billion ($3 billion), bringing total state support for Micron to roughly ¥775 billion ($4.7 billion) to date. Micron remains the only overseas DRAM manufacturer on Japanese soil, lending the project strategic weight for Tokyo. The site originally produced Micron’s first HBM wafer and was acquired in 2013 when the company purchased bankrupt Japanese DRAM maker Elpida.

The expansion will focus on advanced memory, with HBM at its core; about 80 % of the required materials are already sourced locally. Micron also builds two cutting‑edge fabs in Boise, U.S., and broke ground this year on a $100 billion production site near Syracuse, New York.

Separately, Micron and Ford announced a long‑term supply agreement for memory and storage in Ford’s next‑generation vehicles. Micron will scale automotive memory output, using its Manassas, Virginia fab to support the deal.