Intel Foundry has developed the world's thinnest gallium nitride (GaN) chiplet, combining GaN power semiconductors with traditional silicon logic on a single 300-millimeter wafer. This breakthrough innovation merges GaN's superior power delivery capabilities with silicon-based computational functions, eliminating the need for separate chips to dictate power behavior. The silicon base measures just 19 micrometers, representing a significant advancement in semiconductor manufacturing.

The GaN-on-silicon chip, manufactured on a 30nm process, demonstrates excellent electrical properties. It maintains stable current carrying with very low power loss while blocking voltages up to 78V without leakage. Traditional logic elements including inverters, NAND gates, multiplexers, and ring oscillators have been successfully integrated, achieving switching times of just 33 picoseconds across the entire wafer.

This technology holds particular promise for electric vehicles and data centers where space constraints and high temperatures reaching 150°C demand reliable components. GaN's superior material properties enable better performance at extreme temperatures and frequencies exceeding 300GHz. Intel's successful combination of these materials indicates potential for scalable manufacturing of next-generation robotics and AI data center components.