We have seen numerous reports about Chinese memory giant CXMT and its production. The company has now reportedly entered risk production of the latest LPDDR6 memory, reaching parity with Samsung, SK hynix, and Micron in both manufacturing and technological evolution.

According to multiple reports, CXMT's LPDDR6 memory will operate at speeds of up to 12.8 Gbps, with the base speed of LPDDR6 being 10.7 Gbps. LPDDR6 picks up where LPDDR5X left off, which could reach speeds of up to 10.7 Gbps when highly overclocked.

The new standard pushes higher speeds, with the first generation of LPDDR6 from CXMT's fabs reaching 12.8 Gbps. Additionally, CXMT is producing these chips with a 16 Gb capacity, equivalent to 2 GB, and the memory IC is placed inside a package‑on‑package (POP) casing, featuring about 1,295 pins in a ball grid array.

For now, this production will be only a trial run before high‑volume manufacturing (HVM), which will likely take place weeks or even months after the initial risk production. Currently, the company is shipping its LPDDR6 to customers for validation, suggesting that we will likely see full risk production soon. Compared to SK hynix, the South Korean memory giant announced earlier that its LPDDR6 memory modules would feature a 16 Gb capacity on the sixth‑generation 10 nm node, known as 1c, running at up to 14.4 Gbps.