SK hynix has unveiled its 1c LPDDR6 memory with a 16 Gb capacity, manufactured on the sixth-generation 10 nm node. The South Korean semiconductor giant confirmed mass production will begin in the first half of the year, with products reaching customers by the second half. This represents a significant leap in mobile memory technology, targeting next-generation smartphones and portable devices.

According to SK hynix, these LPDDR6 modules will exceed 10.7 Gbps speeds, with the company preparing overclocked versions that could reach up to 14.4 Gbps. This performance boost delivers a 33% improvement over LPDDR5X memory, which previously topped out at 10.7 Gbps. The company demonstrated these capabilities at the International Solid-State Circuits Conference (ISSCC) 2026 in San Francisco, showcasing its roadmap for mobile memory advancement.

The new LPDDR6 generation incorporates several efficiency innovations, including a sub-channel structure that allows selective channel operation and Dynamic Voltage and Frequency Scaling (DVFS). These technologies enable power efficiency improvements exceeding 20%, with DVFS dynamically adjusting voltage and frequency based on usage scenarios. During gaming applications, frequencies will scale to maximum bandwidth, while standard applications will operate at lower frequencies to balance power consumption.