Chinese memory manufacturer CXMT has broken the 9,000 MT/s barrier with its DDR5 modules on the AMD platform, rivaling offerings from Micron, SK hynix, and Samsung. Using a Colorful iGame Shadow II 24G×2 kit with 48 GB of memory, the modules achieved speeds exceeding 9,014 MT/s when running at 4,507 MHz on a Colorful iGame X870E VULCAN W OC motherboard, leveraging double data rate technology.

Late last year, CXMT announced DDR5 speeds of up to 8,000 MT/s, but recent overclocking results show even greater potential. The company is also focusing on reducing latency, with some kits tested on ASUS motherboards to achieve ultra-low latency performance comparable to industry leaders.

Colorful has tested DDR5 kits on the latest AMD and Intel platforms, reaching 6,000 MT/s with CL30 latency and exploring CL28 latency in preliminary tests. These developments suggest CXMT memory is finally matching the standards of top-tier DRAM producers in both speed and latency.

Reports indicate CXMT uses a 17 nm node for DDR5 chip production with a 90% yield, only slightly behind Samsung's yields on its 10 nm class node.