ASML Holding N. V. and Taiwan Semiconductor Manufacturing Company announced a collaborative initiative to lead the semiconductor industry's transition to larger-format Extreme Ultraviolet (EUV) lithography photomasks. While High NA EUV will be adopted for production using current 6-inch masks, the transition to larger 12-inch masks is expected to increase fab productivity, lower chipmaking costs, and remove stitching constraints.

Christophe Fouquet, president & CEO of ASML, stated the adoption of High NA EUV will increase progressively along the device scaling roadmap, first using current masks and then supported by 12-inch masks enabling greater scanner productivity. TSMC Chairman and CEO Dr. C. C.

Wei emphasized that industry collaboration unlocks possibilities no single company could achieve alone. TSMC intends to use ASML's High NA technology in high-volume manufacturing for advanced nodes starting in 2030. On September 7, in advance of the SPIE BACUS Conference in Monterey, California, ASML and TSMC established an industry-wide collaborative initiative to drive the transition to 12-inch photomasks.

This effort aims to establish a 12-inch mask pilot line by 2031, paving the way for 12-inch High-NA lithography systems to enter advanced node production by 2033. Major ecosystem partners and suppliers attended the event and expressed strong interest in this transition.