Samsung's second fabrication plant in Taylor, Texas, is reportedly fully booked, with AMD securing the majority of its capacity. According to industry sources cited by Korea's Maeil Business Newspaper, the facility will produce 2 nm HBM base dies primarily for AMD, alongside some orders for NVIDIA. These base dies serve as the logic foundation for high-bandwidth memory stacks, which Samsung will pair with DRAM manufactured in South Korea before shipping as finished HBM modules.
The shift to 2 nm represents a move beyond current 4 nm-based HBM4 and HBM4E generations, targeting future memory demands. The agreement follows a October visit by AMD CEO Lisa Su to Samsung, where foundry orders were reportedly exchanged for priority HBM supply. A prior March memorandum of understanding already designated Samsung as the primary HBM4 supplier for AMD's Instinct MI455X accelerator.
Construction on Fab 2, approximately 1.5 times the size of Fab 1, began recently, with equipment installation scheduled for February 2029 and mass production targeted for 2030. NVIDIA's involvement remains uncertain, as the company has reportedly requested its NVHBM base dies be manufactured by TSMC, potentially limiting further Samsung orders.
Source: TechPowerUp News · Summarized by HeadlinesBriefing