Samsung Electronics and Broadcom announced an MOU to expand strategic collaboration across memory and foundry technologies for AI infrastructure. The agreement was signed at the AI Summit at The Midway in San Francisco, attended by executives including Jinman Han, Hock Tan, and Korean government representatives. The collaboration is estimated at more than $200 billion over five years through 2030.

On memory, the companies will collaborate on industry-leading solutions including High Bandwidth Memory (HBM) for Broadcom's next-gen AI accelerators. In foundry, the focus is on Samsung's 2-nanometer (nm) and below process technologies for Broadcom's products, including Wireless Broadband Communications solutions. Collaboration extends to advanced packaging built on Samsung's 2 nm process, including 2.3D and 2.5D integration for higher-performance, power-efficient AI and networking silicon.

"AI is driving unprecedented demand for tightly integrated semiconductor technologies spanning memory, logic and advanced packaging," said Young Hyun Jun, Vice Chairman & CEO of Samsung's Device Solutions Division. "By expanding our collaboration with Broadcom across these critical technologies, we look forward to delivering greater value to customers while advancing the AI infrastructure of the future."

Charlie Kawwas, President of Broadcom's Semiconductor Solutions Group, stated that close collaboration across the semiconductor ecosystem is increasingly important as AI infrastructure scales. Samsung's end-to-end capabilities across memory, logic, foundry, and advanced packaging position it to deliver integrated solutions for the AI era.