Micron is developing its first 3D NAND Flash, the G11, using wafer‑to‑wafer bonding to achieve 400-layer stacking, targeting a 2027 release. By splitting wafers into memory and peripheral layers and bonding them with hybrid technology, Micron follows Chinese rival YMTC’s Xtacking approach, aiming to double density to 42 Gb/mm² and boost I/O speed from 3,600 MT/s to 5,400 MT/s. The G11 promises a 25 % reduction in energy per bit and overall capacity gains, though final SSD performance will depend on controller and firmware integration.
Micron’s roadmap marks a shift to advanced 3D silicon, positioning the company for higher‑density storage as traditional scaling nears its limits.
Source: TechPowerUp News · Summarized by HeadlinesBriefing