Chinese memory maker CXMT is planning a second DRAM fab in Beijing to meet high demand for its memory products. According to Reuters, the company is already in talks to secure funding for the project, which could cost over $10 billion. Currently, CXMT operates two 12-inch fabs, one in Hefei and one in Beijing, with each having an output of about 100,000 WPM.

CXMT aims to triple its current output capacity to an astonishing 600,000 WPM once the Shanghai and Hefei plants are fully operational. The company is already projected to end the year 2026 with about 350,000 WPM of DRAM output, trailing closely behind Micron's 375,000 WPM.

Notably, CXMT is leading the industry in construction speed, building cleanrooms in just 12 months compared to the industry average of two years. This rapid expansion comes as the supply chain struggles to meet massive demand driven by AI data center buildouts, though much of the added capacity will likely be consumed by Chinese hyperscalers and AI labs.