Samsung is officially ending production of its aging 2D NAND flash storage this year at its Hwaseong site, with Line 12 being the last facility to use this outdated technology. Instead of abandoning the facility entirely, the company plans to repurpose its chip-making tools for DRAM metallization processes needed for modern memory production. This transformation represents a significant shift in Samsung's manufacturing strategy.

Line 12 currently produces 80,000 to 100,000 12-inch wafers monthly, all dedicated to 2D NAND flash that has been superseded by more efficient 3D NAND technology. By converting this capacity to DRAM production, Samsung can better meet growing demand for high-bandwidth memory solutions. The facility will produce Samsung's 6th-generation 10 nm-class 1c DRAM technology specifically designed for HBM4 applications.

Samsung expects its total 1c DRAM wafer capacity to reach approximately 200,000 wafers per month in the second half of the year. This repurposing effort will run alongside production at Pyeongtaek Line 3 and Line 4, creating a more efficient manufacturing network. The move demonstrates how semiconductor manufacturers are adapting older facilities to support emerging AI-driven memory technologies rather than letting valuable infrastructure sit idle.