Samsung's upcoming HBM4E memory has reportedly passed testing for NVIDIA's next-generation "Rubin Ultra" AI GPU accelerator family. This is great news for the company, as its previous HBM3E didn't meet NVIDIA's requirements, leading NVIDIA to choose Samsung for GDDR7 only, instead of HBM3E.
The new HBM generation brings significant advancements, and Samsung is one of the leading manufacturers with designs currently running at 14 Gbps per pin and 2,048 pins per HBM4E stack. Samsung can achieve a maximum bandwidth of 3.6 TB/s, and at 16 Gbps, this maximum memory bandwidth will increase to 4 TB/s for a single HBM4E stack. With about a dozen memory stacks per AI accelerator or GPU, the total memory bandwidth will be remarkable.
The company is currently offering this memory in a 12-layer configuration with a memory density of 48 GB per stack. However, customer requirements will also include 8-layer 32 GB and 16-layer 64 GB stacks in the future. For manufacturing this HBM4E, Samsung has been sending out samples since May of this year, and the total volume production is expected to be around 20,000 wafers per month in 2026, doubling to 50,000 wafers per month in 2027.
For base die manufacturing, the company has reportedly allocated half of its 4 nm SF4 node production to HBM4E base die manufacturing. This indicates high customer interest in technologies like NVHBM, suggesting we could see designs that are more customized than before.
Source: TechPowerUp News · Summarized by HeadlinesBriefing