Infineon Technologies AG has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria, marking the first such achievement in a full-scale semiconductor fab environment. This innovation milestone was realized by utilizing existing silicon manufacturing equipment. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient than 200 mm wafers, offering 2.3 times more chips per wafer. Infineon Technologies, Jochen Hanebeck, and Villach, Austria are central to this breakthrough.
The milestone further strengthens Infineon's leadership in power systems, enabling scalable semiconductor manufacturing and driving profitable growth. The technology provides a cost-effective and secure supply base for automotive, renewable energy, industrial, and AI data center applications. SiC is a key material for highly efficient power conversion, enabling lower power loss and higher power density. Infineon will plan the 300-mm SiC technology and ramp timing in close collaboration with customers and partners.
In parallel, Infineon has also successfully proofed the feasibility of its Cold Split technology with 300-mm SiC, which separates wafers with less material loss and reduced processing time. Both developments position Infineon to scale SiC technology in line with market demand. Infineon manufactures semiconductors based on silicon, silicon carbide, and gallium nitride.
On October 27, 2026, the company announced an approximately €1.1 billion investment in a high-volume GaN manufacturing facility in Villach.
Source: TechPowerUp News · Summarized by HeadlinesBriefing