Samsung plans to double its HBM4 and HBM4E production capacity from 20,000 to 50,000 wafers per month by 2027, according to SE Daily. The estimate is based on glass carrier orders, which stabilize thin DRAM wafers during HBM stacking. Overall HBM production, including HBM3 and HBM3E, is expected to rise from 180,000 wafers this year to 250,000 next year, with 80% allocated to HBM4 and HBM4E.

Samsung began mass production of HBM4 on its sixth-generation 10 nm-class 1c node in February, with HBM4E customer samples slated for mid-2026. The company has dedicated half of its 4 nm SF4 node output to HBM4 base die manufacturing. This expansion reflects surging demand for higher densities and bandwidth in AI accelerators.

Samsung's HBM market share has surged from 15% in Q2 2025 to 33% in Q2 2026, effectively doubling in one year. With growing customer adoption and aggressive capacity scaling, the firm is positioned to capture further market share in the high-bandwidth memory sector.