Intel and SK hynix are in talks to establish DRAM production lines in the United States, marking the first such initiative. According to sources, Intel may collaborate with SK hynix on a joint venture to acquire memory IP technology, or SK hynix could lease part of Intel's facility in Ohio. A joint venture would alleviate supply chain pressures for hyperscalers and fabless chip designers.

Alternatively, if SK hynix leases the Ohio facility, it would pay premiums while retaining all production. Reuters reports the primary goal is to produce regular planar DRAM, HBM, and NAND Flash storage solutions. Intel declined to comment but confirmed ongoing Ohio investments.

SK hynix stated it has not finalized any decision but did not rule out future collaboration. The decision depends on several factors, including potential South Korean trade ministry review under the Industrial Technology Protection Act if national core technology is involved. For Intel, re-entering DRAM manufacturing would enhance its product portfolio, increase foundry occupancy, and diversify revenue streams.